4N60-N Datasheet - Unisonic Technologies

N-CHANNEL POWER MOSFET

4N60-N Features

* RDS(ON) ≤ 2.5 Ω @ VGS=10V, ID=2.2A

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, high RuggednessA Power MOSFET

4N60-N General Description

The UTC 4N60-N is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power suppli.

4N60-N Datasheet (255.55 KB)

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Datasheet Details

Part number:

4N60-N

Manufacturer:

Unisonic Technologies

File Size:

255.55 KB

Description:

N-channel power mosfet.

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4N60-N N-CHANNEL POWER MOSFET Unisonic Technologies

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4N60-N Features

4N60-N General Description

Datasheet Details

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Description:

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