4N60-N Datasheet, Mosfet, Unisonic Technologies

✔ 4N60-N Features

RDS(ON) ≤ 2.5 Ω @ VGS=10V, ID=2.2A
Fast Switching Capability
Avalanche Energy Specified
Improved dv/dt Capability, high RuggednessA Power MOSFET
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✔ 4N60-N Application

in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.
FEATURES

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Part number:

4N60-N

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Unisonic Technologies

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📄 Datasheet

Description:

N-channel power mosfet. The UTC 4N60-N is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate c

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MOSFET N-CH 600V 3.8A TO220F

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4N60-N N-CHANNEL POWER MOSFET Unisonic Technologies