4N60-Q - N-CHANNEL POWER MOSFET
The UTC 4N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching applications in power suppli
4N60-Q Features
* RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high RuggednessA
* SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-972.F 4N60-Q Power MOSFET
