Datasheet4U Logo Datasheet4U.com

4N600 N-Channel MOSFET

📥 Download Datasheet Datasheet Preview Page 1

Description

Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor 4N600(3600) .
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited f.

📥 Download Datasheet

Preview of 4N600 PDF
datasheet Preview Page 2

Datasheet Specifications

Part number
4N600
Manufacturer
ETC
File Size
36.81 KB
Datasheet
4N600_ETC.pdf
Description
N-Channel MOSFET

Features

* Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON) VDSS = 600V RDS (ON) = 1.9 Ω ID = 4.0A Orderin

Applications

* such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed. The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts. A

4N600 Distributors

📁 Related Datasheet

  • 4N60 - 4A 600V N-channel Enhancement Mode Power MOSFET (ROUM)
  • 4N60-C - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 4N60-CB - N-CHANNEL MOSFET (UTC)
  • 4N60-E - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 4N60-N - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 4N60-Q - N-CHANNEL POWER MOSFET (UTC)

📌 All Tags

N-Channel MOSFET ETC
ETC 4N600-like datasheet