Datasheet Details
Part number:
4N600
Manufacturer:
ETC
File Size:
36.81 KB
Description:
N-channel mosfet.
Datasheet Details
Part number:
4N600
Manufacturer:
ETC
File Size:
36.81 KB
Description:
N-channel mosfet.
4N600, N-Channel MOSFET
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to tran
4N600 Features
* Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON) VDSS = 600V RDS (ON) = 1.9 Ω ID = 4.0A Orderin
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