4N600

N-Channel MOSFET

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4N600 Datasheet (36.81 KB)

4N600 Datasheet Preview — Preview of 4N600 PDF

Datasheet Details

Part number:

4N600

Manufacturer:

ETC

File Size:

36.81 KB

Description:

N-channel mosfet.

4N600 Features

* Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON) VDSS = 600V RDS (ON) = 1.9 Ω ID = 4.0A Orderin

4N600 General Description

The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to tran.

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4N600 N-Channel MOSFET ETC

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