4N600 Datasheet, Mosfet, ETC

4N600 Features

• Mosfet
• Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient

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Part number:

4N600

Manufacturer:

ETC

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36.81kb

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📄 Datasheet

Description:

N-channel mosfet. The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are part

4N600 Application

• Applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are ne

TAGS

4N600

ETC

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