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4N60-E Datasheet - Unisonic Technologies

N-CHANNEL POWER MOSFET

4N60-E Features

* RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, high Ruggedness

* SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-970.D 4N60-E Power MOSFET

4N60-E General Description

The UTC 4N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power suppli.

4N60-E Datasheet (265.50 KB)

Preview of 4N60-E PDF

Datasheet Details

Part number:

4N60-E

Manufacturer:

Unisonic Technologies

File Size:

265.50 KB

Description:

N-channel power mosfet.

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4N60-E N-CHANNEL POWER MOSFET Unisonic Technologies

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