2301 P-Channel Enhancement Mode Power MOSFET

Description

GOFORD 2301 .
The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

Datasheet Specifications

Features

* VDSS RDS(ON) RDS(ON) ID @-4.5V(Typ) @-2.5V(Typ) -20V 48mΩ 61 mΩ -3 A
* High Power and current handing capability
* RoHS Compliant

2301 Distributors

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