2301 - P-Channel Enhancement Mode Power MOSFET

General Description

The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

VDSS RDS(ON) RDS(ON) ID @-4.5V(Typ) @-2.5V(Typ) -20V 48mΩ 61 mΩ -3 A.
High Power and current handing capability.
RoHS Compliant.
Surface Mount Package.

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2301 p-channel enhancement mode power mosfet by GFD - Datasheet Preview

Datasheet Details

Part number	2301
Manufacturer	GFD
File Size	1.26 MB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	2301 Datasheet

Full PDF Text Transcription for 2301 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2301. For precise diagrams, and layout, please refer to the original PDF.

GOFORD 2301 DESCRIPTION The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This devic...

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ate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDSS RDS(ON) RDS(ON) ID @-4.5V(Typ) @-2.

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