GFD30N03 - N-Channel Enhancement Mode MOSFET

General Semiconductor

Datasheet Details

Part number	GFD30N03
Manufacturer	General Semiconductor
File Size	118.46 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	GFD30N03_GeneralSemiconductor.pdf

Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Specially Designed for Low Voltage DC/DC Converters Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (1) C = 25°C unless otherwise noted) Symbol VDS VGS ID IDM TC = 25°C TC = 100°C PD TJ, Tstg RθJC (2) Limit 30 ± 20 Unit V 43 120 44.5.

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Published: Jul 28, 2008 |