* Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Specially Designed for Low Voltage DC/DC Converters Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-S
GFD30N03 Datasheet (118.46 KB)
GFD30N03
General Semiconductor
118.46 KB
N-channel enhancement mode mosfet.
GFD30N03 New Product Vishay Semiconductor VDS 30V RDS(ON) 15mΩ ID 43A N-Channel Enhancement-Mode MOSFET H C N ET TRE F N TO-252 (DPAK) E G ® 0.265 .
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