GFD30N03 Datasheet - General Semiconductor

GFD30N03 N-Channel Enhancement Mode MOSFET

GFD30N03 New Product Vishay Semiconductor VDS 30V RDS(ON) 15mΩ ID 43A N-Channel Enhancement-Mode MOSFET H C N ET TRE F N TO-252 (DPAK) E G ® 0.265 (6.73) 0.255 (6.48) 0.214 (5.44) 0.206 (5.23) 0.050 (1.27) 0.035 (0.89) 0.094 (2.39) 0.087 (2.21) 0.023 (0.58) 0.018 (0.46) D G S 0.190 (4.826) www.DataSheet4U.com D 0.170 (4.32) min. 0.245 (6.22) 0.235 (5.97) 0.410 (10.41) 0.380 (9.65) 0.197 (5.00) 0.177 (4.49) 0.165 (4.191) G S 0.060 (1.52) 0.045 (1.14) 0.100 (2.54) 0.035 (0.89) 0.028 .

GFD30N03 Features

* Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Specially Designed for Low Voltage DC/DC Converters Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-S

GFD30N03_GeneralSemiconductor.pdf