* Advanced Trench Process Technology
* High Density Cell Design for Ultra Low On-Resistance
* Specially Designed for Low Voltage DC/DC Converters
* Fast Switching for High Efficiency
* Low Gate Charge Maximum Ratings and Thermal Characteristics (T Parameter D
GFD25N03 Datasheet (116.08 KB)
GFD25N03
General Semiconductor
116.08 KB
N-channel enhancement mode mosfet.
GFD25N03
N-Channel Enhancement-Mode MOSFET
t H c u C rod EN ET P R T ENF New
®
VDS 30V RDS(ON) 16.5mΩ ID 38A
D
G
TO-252 (DPAK)
G
0.265 (6.73) 0..
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