GFD2206 N-Channel Enhancement Mode MOSFET

General Semiconductor

Description

GFD2206 N-Channel Enhancement-Mode MOSFET H C N T E TRE ENF VDS 60V RDS(ON) 22mΩ ID 42A D ® G TO-252 (DPAK) 0.265 (6.73) 0.255 (6.48) 0.214 (5.4.

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Datasheet Specifications

Part number: GFD2206
Manufacturer: General Semiconductor
File Size: 117.37 KB
Datasheet: GFD2206_GeneralSemiconductor.pdf
Description: N-Channel Enhancement Mode MOSFET

Features

* Advanced Trench Process Technology
* High Density Cell Design for Ultra Low On-Resistance
* Rugged-Avalanche Energy Rated
* Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuo

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GFD2206 N-Channel Enhancement Mode MOSFET General Semiconductor

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