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GFD2206 Datasheet - General Semiconductor

GFD2206 N-Channel Enhancement Mode MOSFET

GFD2206 N-Channel Enhancement-Mode MOSFET H C N T E TRE ENF VDS 60V RDS(ON) 22mΩ ID 42A D ® G TO-252 (DPAK) 0.265 (6.73) 0.255 (6.48) 0.214 (5.44) 0.206 (5.23) 0.094 (2.39) 0.087 (2.21) 0.023 (0.58) 0.018 (0.46) 0.050 (1.27) 0.035 (0.89) t c u rod P New G S 0.190 (4.826) www.DataSheet4U.com D 0.170 (4.32) min. 0.245 (6.22) 0.235 (5.97) 0.410 (10.41) 0.380 (9.65) 0.197 (5.00) 0.177 (4.49) 0.165 (4.191) G S 0.060 (1.52) 0.045 (1.14) 0.100 (2.54) 0.035 (0.89) 0.028 (0.71) 0.204 (5.

GFD2206 Features

* Advanced Trench Process Technology

* High Density Cell Design for Ultra Low On-Resistance

* Rugged-Avalanche Energy Rated

* Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuo

GFD2206_GeneralSemiconductor.pdf

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Datasheet Details

Part number:

GFD2206

Manufacturer:

General Semiconductor

File Size:

117.37 KB

Description:

N-channel enhancement mode mosfet.

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GFD2206 GFD2206 N-Channel Enhancement Mode MOSFET General Semiconductor

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