GFD2206 - N-Channel Enhancement Mode MOSFET

General Semiconductor

Datasheet Details

Part number	GFD2206
Manufacturer	General Semiconductor
File Size	117.37 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	GFD2206_GeneralSemiconductor.pdf

Advanced Trench Process Technology.
High Density Cell Design for Ultra Low On-Resistance.
Rugged-Avalanche Energy Rated.
Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS =10V Pulsed Drain Current (1) Maximum Power Dissipation Single Pulse Avalanche Energy Avalanche Current (1) (1) (2) C = 25°C unless otherwise noted) Symbol VDS VGS TC = 25°C TC.

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Published: Jul 28, 2008 |