GFD50N03A - N-Channel Enhancement Mode MOSFET

General Semiconductor

Datasheet Details

Part number	GFD50N03A
Manufacturer	General Semiconductor
File Size	175.04 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	GFD50N03A_GeneralSemiconductor.pdf

Advanced Trench Process Technology.
High Density Cell Design for Ultra Low On-Resistance.
Specially Designed for Low Voltage DC/DC Converters.
Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TC = 25°C TC = 70°C Symbol VDS VGS ID IDM PD TJ, Tstg RθJC (2) C = 25°C unless otherwise noted) Limit 30 ± 2.

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Published: Jul 28, 2008 |