G1003B - N-Channel MOSFET

General Description

The G1003B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

VDSS RDS(ON) RDS(ON) ID @10V (Typ) @ 4.5V(Typ) 100V 135 mΩ 145mΩ 5A.
High Power and current handing capability.
RoHS Compliant.
Surface Mount Package.

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G1003B n-channel mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	G1003B
Manufacturer	GOFORD
File Size	1.96 MB
Description	N-Channel MOSFET
Datasheet	G1003B Datasheet

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GOFORD G1003B General Description The G1003B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDSS RDS(ON) RDS(ON) ID @10V (Typ) @ 4.5V(Typ) 100V 135 mΩ 145mΩ 5A ● High Power and current handing capability ● RoHS Compliant ● Surface Mount Package Application ● PWM applications ● Load switch ● Power management Schematic Diagram G1003B Marking and pin Assignment SOT23-3L Ordering Information Part Number G1003B Marking G1003B Case SOT-23-3L Table 1.