G1003B
G1003B is N-Channel MOSFET manufactured by GOFORD.
Description
The G1003B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications.
General Features
- VDSS RDS(ON) RDS(ON) ID
@10V (Typ) @ 4.5V(Typ)
100V 135 mΩ 145mΩ
5A
- High Power and current handing capability
- Ro HS pliant
- Surface Mount Package
Application
- PWM applications
- Load switch
- Power management
Schematic Diagram G1003B
Marking and pin Assignment
SOT23-3L
Ordering Information
Part Number G1003B
Marking G1003B
Case SOT-23-3L
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
Drain-Source Voltage (VGS=0V）
Gate-Source Voltage (VDS=0V)
Drain Current-Continuous(Tc=25℃)
Drain Current-Continuous(Tc=100℃)
IDM (pluse)
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
TJ,TSTG
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
Table 2. Thermal Characteristic
Symbol...
