Datasheet4U.com

G1003B - N-Channel MOSFET

Product Overview

📥 Download Datasheet

G1003B N-Channel MOSFET by GOFORD - Datasheet Preview — Datasheet preview – G1003B

Datasheet Details

Part number	G1003B
Manufacturer	GOFORD
File Size	1.96 MB
Description	N-Channel MOSFET
Datasheet	G1003B Datasheet
Additional preview pages of the G1003B datasheet.

Product details

Description

The G1003B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features

VDSS RDS(ON) RDS(ON) ID @10V (Typ) @ 4.5V(Typ) 100V 135 mΩ 145mΩ 5A.
High Power and current handing capability.
RoHS Compliant.
Surface Mount Package.

📁 Similar Datasheet

G1003A - N-Channel Enhancement Mode Power MOSFET (GFD)
G1000LL250 - Anode-Shorted Gate Turn-Off Thyristor (IXYS)
G1000LM250 - Anode-Shorted Gate Turn-Off Thyristor (IXYS)
G1000NC450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
G1000NL450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
G1000QC250 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
G1000QC400 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
G1000QC450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)

Other Datasheets by GOFORD

G1002 - N-Channel Enhancement Mode Power MOSFET
G1005 - MOSFET
G1006A - N-Channel MOSFET
G100N03 - N-Channel Enhancement Mode Power MOSFET
G100N03D5 - N-Channel Enhancement Mode Power MOSFET
G10N03 - N-Channel Enhancement Mode Power MOSFET

Published: Oct 26, 2024 |