G1006A - N-Channel MOSFET

General Description

design to provide excellent RDS(ON) with low gate charge.

can be used in a wide variety of applications.

It is ESD protected.

Key Features

VDSS RDS(ON) ID @10V (Typ) 100V 140 mΩ 6A.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Excellent package for good heat dissipation.
RoHS Compliant.

📥 Download Datasheet

G1006A n-channel mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	G1006A
Manufacturer	GOFORD
File Size	2.90 MB
Description	N-Channel MOSFET
Datasheet	G1006A Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
G1000LL250	Anode-Shorted Gate Turn-Off Thyristor	IXYS
G1000LM250	Anode-Shorted Gate Turn-Off Thyristor	IXYS
G1000NC450	Anode Shorted Gate Turn-Off Thyristor	IXYS
G1000NL450	Anode Shorted Gate Turn-Off Thyristor	IXYS
G1000QC250	Anode Shorted Gate Turn-Off Thyristor	IXYS

Other Datasheets by GOFORD

Part Number	Description
G1002	N-Channel Enhancement Mode Power MOSFET
G1003B	N-Channel MOSFET
G1005	MOSFET
G100N03	N-Channel Enhancement Mode Power MOSFET
G100N03D5	N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

GOFORD Description The G1006A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected.