G1002
G1002 is N-Channel Enhancement Mode Power MOSFET manufactured by GOFORD.
Description
The G1002 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V)
100V 2A < 250mΩ < 260mΩ l 100% Avalanche Tested l Ro HS pliant
Schematic diagram
Application l Power switch l DC/DC converters
SOT-23
Ordering Information
Device G1002
Package SOT-23
Marking G1002
Packaging 3000pcs/Reel
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Operating Junction and Storage Temperature Range
(note1)
VDS ID IDM VGS PD TJ, Tstg
±20
-55 To 150
ºC
Thermal Resistance
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-Ambient
Rth JA
ºC/W
.gofordsemi.
TEL：0755-29961263
FAX:0755-29961466(A1396-V1.1)
Specifications TJ = 25ºC, unless otherwise noted
Parameter
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