� VDS = 30 V, ID = 50 A RDS(ON) < 6.5 mΩ @ VGS = 10 V � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Good stabilty a.

. 50N03 VDS 30V RDS(ON) -- ID 50A GENERAL FEATURES � VDS = 30 V, ID = 50 A RDS(ON) < 6.5 mΩ @ VGS = 10 V � High den.

The 50N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety of applications . 50N03 VDS 30V RDS(ON) -- ID 50A GENERAL FEATURES � VDS = 30 V, ID = 50 A RDS(ON) < 6.5 m.

50N02-09

50N024

50N02409PU54A

50N025-05P

50N035

50N03LT

50N04

50N04-07L

50N06

50N06-F

50N06-Q

50N06B

50N06F