Bay Linear 50N035
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed. The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts.| Part No. | 50N035 |
|---|---|
| Datasheet | 50N035 Download |
| Manufacturer | Bay Linear |
| Description | N-Channel FET |
| Buy | Stock & Price |
DESCRIPTION
Also, available in a D2 surface mount power package with a power dissipation up to 2 WattsFEATURES
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● Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON) VDSS = 30V RDS (ON) = 0.013 Ω ID = 52A Ordering Information Device 50N035T 50N035S Package TO-220 TO-263 ( D2 ) Temp. 0 to 150°C 0 to 150°C Absolute Maximum Rating Symbol ID Parameter Drain Current Continues Pulsed Drain-Source Voltage Gate Source Voltage Total Power Dissipation @ TC =25°C Derate above 25°C Operating and Storage Temperature Range Max 52 156 30 ±20 50 0.4 -65 to 175 Unit A V V W W/°C °C VDSS VGSV PD TJ TSTG Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556 50N035
ELECTRICAL CHARACTERISTICS
( TC = Symbol Parameter OFF CHARACTERSTICS Drain source breakdown BVDSS voltage Zero Gate Voltage...