Datasheet Details
| Part number | 50N035 |
|---|---|
| Manufacturer | Bay Linear |
| File Size | 66.88 KB |
| Description | N-Channel FET |
| Datasheet |
 50N035 Datasheet
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General Description
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to trans
Key Features
- Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON) VDSS = 30V RDS (ON) = 0.013 Ω ID = 52A Ordering Information Device 50N035T 50N035S Package TO-220 TO-263 ( D2 ) Temp. 0 to 150°C 0 to 150°C Absolute Maximum Rating Symbol ID Parameter Drain Current Continues Pulsed Drain-Source Voltage Gate S.