Datasheet4U Logo Datasheet4U.com

50N03 - MOSFET

General Description

The 50N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge .

It can be used in a wide Vanety of applications .

Key Features

  • VDS = 30 V, ID = 50 A RDS(ON) < 6.5 mΩ @ VGS = 10 V.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stabilty and unifomity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability TO-252-2L top view.

📥 Download Datasheet

Datasheet Details

Part number 50N03
Manufacturer GFO
File Size 1.06 MB
Description MOSFET
Datasheet download datasheet 50N03 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
50N03 Power Transistor Tuofeng
50N03 N-CHANNEL MOSFET KIA
50N035 N-Channel FET Bay Linear
50N03LT PHP50N03LT NXP Semiconductors
50N02-09 SUB50N02-09 Vishay Siliconix

Other Datasheets by GFO

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DESCRIPTION The 50N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety of applications . 50N03 VDS 30V RDS(ON) -- ID 50A GENERAL FEATURES � VDS = 30 V, ID = 50 A RDS(ON) < 6.5 mΩ @ VGS = 10 V � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Good stabilty and unifomity with high EAS � Excellent package for good heat dissipation � Special process technology for high ESD capability TO-252-2L top view Application � Power switching application � Hard Switched and High Frequency Circuits � Uninterruptible Power Supply Ordering Information PART NUMBER PACKAGE BRAND 50N03 TO-252-2L OGFD www.goford.