2N6107 - PNP Epitaxial Silicon Transistor

Galaxy Microelectronics

Key Features

z DC Curent Gain Specified to 7A. z Collector-Emitter Sustaining Voltage. z High Current Gain. Pb Lead-free Production specification 2N6107 TO-220AB.

2N6107 pnp epitaxial silicon transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	2N6107
Manufacturer	Galaxy Microelectronics
File Size	207.57 KB
Description	PNP Epitaxial Silicon Transistor
Datasheet	2N6107 Datasheet

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PNP Epitaxial Silicon Transistor FEATURES z DC Curent Gain Specified to 7A. z Collector-Emitter Sustaining Voltage. z High Current Gain. Pb Lead-free Production specification 2N6107 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Continuous Peak Collector Dissipation Junction and Storage Temperature -70 V -5 V -7 A -10 3A 2W -65 to +150 ℃ X029 Rev.A www.gmicroelec.com 1 Production specification PNP Epitaxial Silicon Transistor 2N6107 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.