Galaxy Century Microelectronics 2N6107
PNP Epitaxial Silicon Transistor
| Part No. | 2N6107 |
|---|---|
| Datasheet | 2N6107 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | PNP Epitaxial Silicon Transistor |
| Buy | Stock & Price |
FEATURES
z DC Curent Gain Specified to 7A. z Collector-Emitter Sustaining Voltage. z High Current Gain. Pb Lead-free Production specification 2N6107 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Continuous Peak Collector Dissipation Junction and Storage Temperature -70 V -5 V -7 A -10 3A 2W -65 to +150 ℃ X029 Rev.A 1 Production specification PNP Epitaxial Silicon Transistor 2N6107ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-emitter Breakdown Voltage VCEO(SUS) IC=-100mA,IB=0 -70 V Collector Cut-off Current ICEO VCE=-60V,IB=0 -1 mA Collector Cut-off Current ICEX VCE=-80V,VEB(off)=1.5V -10
