Datasheet4U Logo Datasheet4U.com

2SA1736 - PNP Transistor

Features

  • z Low saturation voltage: VCE (sat) =.
  • 0.5 V (max) (IC =.
  • 1.5 A) Pb Lead-free z High speed switching time: tstg = 0.2 μs (typ. ) z Complementary to 2SC4541.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1736 PNP Transistor Toshiba Semiconductor
2SA1736-HF PNP Transistors Kexin
2SA1730 PNP Epitaxial Planar Silicon Transistors Sanyo Semicon Device
2SA1731 PNP Epitaxial Planar Silicon Transistors Sanyo Semicon Device
2SA1732 PNP Epitaxial Planar Silicon Transistors Sanyo Semicon Device

Other Datasheets by Galaxy Microelectronics

Part Number Description
2SA1700 PNP Epitaxial Planar Silicon Transistor
2SA1740 PNP Epitaxial Planar Silicon Transistor
2SA1774 PNP General Purpose Transistor
2SA1797 PNP Transistor
2SA1012 PNP Epitaxial Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PNP Epitaxial Planar Silicon Transistor FEATURES z Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) Pb Lead-free z High speed switching time: tstg = 0.2 μs (typ.) z Complementary to 2SC4541 APPLICATIONS z High-Voltage Driver Applications Production specification 2SA1736 SOT-89 ORDERING INFORMATION Type No. Marking 2SA1736 LD Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current IB Base current PC Collector Dissipation Tj,Tstg Junction and Storage Temperature Note1:Mounted on ceramic substrate(250mm2*0.8t) Value -60 Units V -50 V -6 V -3 A -0.6 A 0.5 W 1 Note1 W -55 to +150 ℃ E125 Rev.A www.gmicroelec.
Published: |