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2SC3149 - NPN Transistor

Features

  • High breakdown voltage(VCBO≥900V).
  • Fast switching speed. Pb.
  • Wide ASO. Lead-free 2SC3149.

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Full PDF Text Transcription

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Production specification NPN Triple Diffused Planar Silicon Transistor FEATURES  High breakdown voltage(VCBO≥900V).  Fast switching speed. Pb  Wide ASO. Lead-free 2SC3149 PPLICATIONS  800V/1.5A Switching Regulator Applications. TO-251 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7V IC Collector Current 1.5 A ICP Collector Current(Pulse) 5A IB Base Current 0.8 A PC Collector Power Dissipation 1.2 W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V012 Rev.A www.gmesemi.
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