Datasheet4U Logo Datasheet4U.com

2SC3149 - NPN Transistor

Key Features

  • High breakdown voltage (VCBO≥900V).
  • Fast switching speed.
  • Wide ASO. Package Dimensions unit:mm 2010C [2SC3149] JEDEC : TO-220AB EIAJ : SC-46 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25˚C PW≤300µs, Duty Cycle≤10%.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC3149 NPN Transistor GME
2SC3149 SILICON POWER TRANSISTOR SavantIC
2SC3149 NPN TEANSISTOR UTC
2SC3149 NPN Transistor JIANGSU CHANGJIANG
2SC3142 Silicon NPN transistor BLUE ROCKET ELECTRONICS

Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SC3142 NPN Epitaxial Planar Silicon Transistor
2SC3143 PNP/NPN Epitaxial Planar Silicon Transistors
2SC3144 PNP/NPN Transistors
2SC3145 PNP/NPN Transistors
2SC3114 PNP/NPN Epitaxial Planar Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:EN1068C NPN Triple Diffused Planar Silicon Transistor 2SC3149 800V/1.5A Switching Regulator Applications Features · High breakdown voltage (VCBO≥900V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SC3149] JEDEC : TO-220AB EIAJ : SC-46 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25˚C PW≤300µs, Duty Cycle≤10% 1 : Base 2 : Collector 3 : Emitter Conditions Ratings 900 800 7 1.5 5 0.