Galaxy Century Microelectronics 2SC3149
NPN Transistor
| Part No. | 2SC3149 |
|---|---|
| Datasheet | 2SC3149 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
● High breakdown voltage(VCBO≥900V).● Fast switching speed. Pb
● Wide ASO. Lead-free 2SC3149 PPLICATIONS
● 800V/1.5A Switching Regulator
APPLICATIONS
. TO-251 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7V IC Collector Current 1.5 A ICP Collector Current(Pulse) 5A IB Base Current 0.8 A PC Collector Power Dissipation 1.2 W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V012 Rev.A 1 Production specification NPN Triple Diffused Planar Silicon Transistor 2SC3149ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage VCBO IC=1mA,IE=0 900 V Collector-emitter breakdown voltage
