Datasheet4U Logo Datasheet4U.com

2SC3149 - NPN Transistor

Key Features

  • High breakdown voltage(VCBO≥900V).
  • Fast switching speed. Pb.
  • Wide ASO. Lead-free 2SC3149.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC3149 NPN Transistor Sanyo Semicon Device
2SC3149 SILICON POWER TRANSISTOR SavantIC
2SC3149 NPN TEANSISTOR UTC
2SC3149 NPN Transistor JIANGSU CHANGJIANG
2SC3142 NPN Epitaxial Planar Silicon Transistor Sanyo Semicon Device

Other Datasheets by Galaxy Microelectronics

Part Number Description
2SC3125 Silicon Epitaxial Planar Transistor
2SC3052 Silicon Epitaxial Planar Transistor
2SC3303 Silicon NPN Transistor
2SC3357 NPN Silicon Transistor
2SC3358 Silicon Epitaxial Planar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Production specification NPN Triple Diffused Planar Silicon Transistor FEATURES  High breakdown voltage(VCBO≥900V).  Fast switching speed. Pb  Wide ASO. Lead-free 2SC3149 PPLICATIONS  800V/1.5A Switching Regulator Applications. TO-251 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7V IC Collector Current 1.5 A ICP Collector Current(Pulse) 5A IB Base Current 0.8 A PC Collector Power Dissipation 1.2 W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V012 Rev.A www.gmesemi.