Datasheet Summary
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
TRANSISTOR (NPN)
TO-220-3L
1. BASE 2. COLLECTOR 3. EMITTER
Features z High breakdown voltage(VCBO>900V) z Fast switching speed z Wide ASO MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
- Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 900 800 7 0.5 2 150 -55-150 Unit V V V A W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown...
