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2SC4548 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • z High breakdown voltage. z Adoption of MBIT process. z Excellent hFE linearlity. Pb Lead-free Production specification 2SC4548.

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NPN Epitaxial Planar Silicon Transistor FEATURES z High breakdown voltage. z Adoption of MBIT process. z Excellent hFE linearlity. Pb Lead-free Production specification 2SC4548 ORDERING INFORMATION Type No. Marking 2SC4548 CN SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 400 400 VEBO Emitter-Base Voltage 5 IC Collector Current 200 ICP Collector Current(Pulse) 400 PC Collector Dissipation (Note1) 1.3 Tj,Tstg Junction and Storage Temperature Note1:Mounted on ceramic substrate(250mm2*0.8t) -55 to +150 Units V V V mA mA W ℃ E055 Rev.A www.gmicroelec.