Kexin Electronics 2SC4548
Transistors
APPLICATIONS
2SC4548 TransistorsFEATURES
High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity.ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm2 x 0.8 mm) Symbol VCBO VCEO VEBO IC ICP PC * Tj Tstg Rating 400 400 5 200 400 1.3 150 -55 to +150 Unit V V V mA mA WELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain-Bandwidth Product Collector Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol ICBO IEBO Testconditons VCB = 300V , IE = 0 VEB = 4V , IC = 0 400 400 5 60 200 0.8 1 70 5 4 0.25 5.0 V V...