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2SD1758 - Medium Power Transistor

Key Features

  • Low VCE(sat). VCE(sat)=0.5V(Typ. ) (IC/IB=2A/0.2A).
  • Complements the 2SB1182.

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Full PDF Text Transcription for 2SD1758 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SD1758. For precise diagrams, and layout, please refer to the original PDF.

Medium Power Transistor FEATURES  Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A)  Complements the 2SB1182. APPLICATIONS  Epitaxial planar type.  NPN silicon transi...

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he 2SB1182. APPLICATIONS  Epitaxial planar type.  NPN silicon transistor. Pb Lead-free Production specification 2SD1758 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5V IC Collector Current(DC) 2A ICP Collector Current(Pulse) 2.5 A IB Base Current 1A PC Collector Power Dissipation 2W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ W016 Rev.A www.gmesemi.

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