900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






GME

BL15N30 Datasheet Preview

BL15N30 Datasheet

N-Channel Power Mosfet

No Preview Available !

N-Channel Power MOSFET
FEATURES
RDS(on) = 240 m  (Typ.) @ VGS = 10 V, ID = 7.5 A
Low Gate Charge (Typ. 28 nC)
Low Crss (Typ. 17 pF)
100% Avalanche Tested
Improved dv/dt Capability
RoHS Compliant
APPLICATIONS
Lighting
Uninterruptible Power Supply
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol Parameter
VDS Drain-Source Voltage
VGS
ID
IDM
EAS
EAR
IAR
dv/dt
PD
Gate -Source Voltage
Drain Current Continuous at TC=25
Continuous at TC=100
Drain Current(pulsed)Note1
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Avalanche Current
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
TC=25
Derate above 25°C
RθJA
RθJC
Tj Tstg
Thermal Resistance,Junction-to-Ambient
Thermal Resistance,Junction-to-Case
Junction and StorageTemperature Range
X132
Rev.A
Production specification
BL15N30
TO-220AB
Value
300
Unit
V
±30
15
9
60
V
A
A
731 mJ
17 mJ
15 A
15 V/ns
170 W
1.45 W/
62.5 /W
0.7 /W
-55 to +150
www.gmesemi.com
1




GME

BL15N30 Datasheet Preview

BL15N30 Datasheet

N-Channel Power Mosfet

No Preview Available !

N-Channel Power MOSFET
Production specification
BL15N30
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN
Drain-Source Breakdown Voltage
V(BR)DSS VGS=0V,ID=250µA
300
Drain-Source Leakage Current
IDSS VDS=300V, VGS=0V
-
Gate- Source Leakage Current
IGSS VDS=0V, VGS=±30V
-
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=250μA
3.0
Static drain-Source On-State resistance RDS(on) VGS=10V,ID=7.5A
-
Drain-Source Diode Forward Voltage
VSD
ISD=15A,VGS=0
-
Input Capacitance
CISS
-
Output Capacitance
COSS
VDS=25V,VGS=0V,f=1.0MHz
-
Reverse Transfer Capacitance
CRSS
-
Turn-On Delay Time
tD(ON)
-
Rise Time
Turn-Off Delay Time
tR
tD(OFF)
VDD =200V, ID=15A,
RG=25
-
-
Fall Time
tF
-
Total Gate Charge
Qg
Gate-source Charge
Gate-drain Charge
Qgs
VDS=320V,VGS=10V
ID=15A
Qgd
Maximum Body-Diode Continuous
Current
IS
-
-
-
-
Maximum Body-Diode Pulsed Current ISM
-
Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 6.5mH, IAS = 15A, VDD = 50V, RG = 25 , Starting TJ = 25°C
3: ISD   15A, di/dt   200A/ s, VDD   BVDSS, Starting TJ = 25°C
4: Essentially Independent of Operating Temperature Typical Characteristics
TYP
-
-
-
-
0.24
-
1310
210
17
26
55
72
40
28
8
12
-
-
MAX
-
1
±100
5.0
0.3
1.4
1750
280
25
62
120
154
90
36
15
60
UNIT
V
μA
nA
V
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
X132
Rev.A
www.gmesemi.com
2


Part Number BL15N30
Description N-Channel Power Mosfet
Maker GME
Total Page 3 Pages
PDF Download

BL15N30 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 BL15N30 N-Channel Power Mosfet
GME
2 BL15N30F N-Channel Power MOSFET
GME





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy