BL15N30 Datasheet | Galaxy Microelectronics

Description

N-Channel Power MOSFET FEATURES  RDS(on) = 240 m　 (Typ.) @ VGS = 10 V, ID = 7.5 A  Low Gate Charge (Typ. 28 nC)  Low Crss (Typ. 17 pF)  100% Avalanche Tested  Improved dv/dt Capability  RoHS Co...