BL15N30F Description
N-Channel Power.
BL15N30F Key Features
- RDS(on) = 240 m (Typ.) @ VGS = 10 V, ID = 7.5 A
- Low Gate Charge (Typ. 28 nC)
- Low Crss (Typ. 17 pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
- RoHS pliant
- Part: BL15N30F
- Manufacturer: Galaxy Microelectronics
- Size: 216.67 KB
Related Galaxy Microelectronics Datasheets
| Part Number | Description |
|---|---|
| BL15N30 | N-Channel Power Mosfet |
| BL1010 | Phototransistor Photocoupler |
| BL1010H | Phototransistor Photocoupler |
| BL1012 | Phototransistor Photocoupler |
| BL1012 | Phototransistor Photocoupler |