BL15N30F
BL15N30F is N-Channel Power MOSFET manufactured by Galaxy Microelectronics.
N-Channel Power MOSFET
Features
- RDS(on) = 240 m (Typ.) @ VGS = 10 V, ID = 7.5 A
- Low Gate Charge (Typ. 28 nC)
- Low Crss (Typ. 17 pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
- RoHS pliant
APPLICATIONS
- Lighting
- Uninterruptible Power Supply
MOSFET Maximum Ratings TC = 25oC unless otherwise noted-
Symbol Parameter
VDS Drain-Source Voltage
VGS ID IDM EAS EAR IAR dv/dt
Gate -Source Voltage
Drain Current Continuous at TC=25℃ Continuous at TC=100℃
Drain Current(pulsed)Note1
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Avalanche Current (Note 1) Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
TC=25℃ Derate above 25°C
RθJA...
