BL15N30F Overview
N-Channel Power.
BL15N30F Key Features
- RDS(on) = 240 m (Typ.) @ VGS = 10 V, ID = 7.5 A
- Low Gate Charge (Typ. 28 nC)
- Low Crss (Typ. 17 pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
- RoHS pliant
BL15N30F Datasheet Details
| Part number | BL15N30F |
|---|---|
| Datasheet | BL15N30F-GME.pdf |
| File Size | 216.67 KB |
| Manufacturer | Galaxy Microelectronics |
| Description | N-Channel Power MOSFET |
|
|