BL15N30F
Overview
- RDS(on) = 240 m (Typ.) @ VGS = 10 V, ID = 7.5 A
- Low Gate Charge (Typ. 28 nC)
- Low Crss (Typ. 17 pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
- RoHS Compliant
| Part | BL15N30F |
|---|---|
| Description | N-Channel Power MOSFET |
| Category | MOSFET |
| Manufacturer | Galaxy Microelectronics |
| Size | 216.67 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |