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BL15N30 Datasheet N-Channel Power Mosfet

Manufacturer: Galaxy Microelectronics

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Key Features

  • RDS(on) = 240 m　 (Typ. ) @ VGS = 10 V, ID = 7.5 A.
  • Low Gate Charge (Typ. 28 nC).
  • Low Crss (Typ. 17 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • RoHS Compliant.

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