BL5N50 Description
Production specification N-Channel Enhancement Mode Field Effect Transistor BL5N50.
BL5N50 Key Features
- Low on-resistance
- Low leakage current
- High speed switching
- Low gate charge
- Avalanche ratings
- 55 to +150 ℃
- Part: BL5N50
- Manufacturer: Galaxy Microelectronics
- Size: 364.71 KB
Related Galaxy Microelectronics Datasheets
| Part Number | Description |
|---|---|
| BL5N65F | N-Channel Power Mosfet |
| BL50N60 | N-Channel Power Mosfet |