Datasheet4U Logo Datasheet4U.com

BL5N50 - N-Channel Power Mosfet

Features

  • Low on-resistance.
  • Low leakage current.
  • High speed switching.
  • Low gate charge.
  • Avalanche ratings. TO-220AB.

📥 Download Datasheet

📁 Similar Datasheet

  • BL50436 - Color TV Remote Control System (SHANGHAI BELLING)
  • BL50462 - Remote Control Transmit Circuit (SHANGHAI BELLING)
  • BL5201 - Complementary output latch of the Hall sensor (SHANGHAI BELLING)
  • BL5362 - Low-power real-time clock chip (SHANGHAI BELLING)
  • BL5372 - Low-power real-time clock chip (SHANGHAI BELLING)
  • BL54573B - TV Band Switches Integrated Circuit (Shanghai Belling)
  • BL54L10 - Bluetooth module (Ezurio)
  • BL54L15 - Bluetooth module (Ezurio)
  • BL55021 - LCD driver and control circuit (SHANGHAI BELLING)
  • BL55022 - LCD driver and control circuit (SHANGHAI BELLING)
Other Datasheets by GME

Full PDF Text Transcription

Click to expand full text
Production specification N-Channel Enhancement Mode Field Effect Transistor BL5N50 FEATURES  Low on-resistance.  Low leakage current.  High speed switching.  Low gate charge.  Avalanche ratings. TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VDS Drain-Source Voltage 500 V VGS ID ID(pulse) IDR IDR(pulse) IAP Gate -Source Voltage Drain Current Drain Current(pulsed) Note1 Body-drain diode reverse drain current Body-drain diode reverse drain peak current(pulsed) Note1 Avalanche current Note3 ±30 5 20 5 20 5 V A A A A A Pch Channel dissipation Note2 30 W RθJA Channel to case Thermal Impedance 4.17 ℃/W Tch Channel temperature 150 ℃ Tstg StorageTemperature Range Note: 1.PW ≤10us, duty cycle ≤ 1 % 2.
Published: |