GME Datasheet | Specifications & PDF Download

Schottky Barrier Rectifiers Production specification SL22F--SL245F Features  Metal silicon junction, majority carrier conduction  High surge capab

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Production specification Silicon Epitaxial Planar Transistor FEATURES  High Collector Current.(IC= 500mA).  Complementary To S8550. Pb Lead-free

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Silicon Epitaxial Planar Transistor FEATURES z Collector Current.(IC= 1.5A） z Complementary To SS8550. Pb Lead-free z Collector dissipation:PC=300m

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SN74LS47 BCD to 7−Segment Decoder/Driver The SN74LS47 are Low Power Schottky BCD to 7-Segment Decoder/ Drivers consisting of NAND gates, input buffer

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Silicon Epitaxial Planar Transistor EATURES  Collector Current.(IC= 1.5A）  Complementary To SS8050. Pb Lead-free  Collector Dissipation: PC=0.3W

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SN74LS47 BCD to 7−Segment Decoder/Driver The SN74LS47 are Low Power Schottky BCD to 7-Segment Decoder/ Drivers consisting of NAND gates, input buffer

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SN5446A, ’47A, ’48, SN54LS47, ’LS48, ’LS49 SN7446A, ’47A, ’48, SN74LS47, ’LS48, ’LS49 BCD-TO-SEVEN-SEGMENT DECODERS/DRIVERS SDLS111 – MARCH 1974 – REV

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BP5336H Multi-segments AC/DC Linear LED Driver Description BP5336H is a high precision multiple segments linear constant current LED driver, which in

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www.xlitx.com Model : Size : Emitting color : Mode : Digit : Category : Maker : 5611BH 0.56-inch Red (Ultra-Bright ) Common-Anode (CA) Single Digit

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5A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =2.4Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer C

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Product Specification Silicon Epitaxial Planar Transistor FEATURES  High voltage and high current VCEO=50V(Min),IC=150mA(Max)  Excellent hFE linear

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PNP Silicon Epitaxial Planar Transistor FEATURES  Low speed switching.  Low saturation voltage.  Excellent hFE linearity and high hFE.  Complemen

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SN5446A, ’47A, ’48, SN54LS47, ’LS48, ’LS49 SN7446A, ’47A, ’48, SN74LS47, ’LS48, ’LS49 BCD-TO-SEVEN-SEGMENT DECODERS/DRIVERS SDLS111 – MARCH 1974 – REV

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Epitaxial Planar NPN Transistor FEATURES  High DC Current Gain.  Built-in a Damper Diode at E-C. Pb Lead-free  Lead Formed for Surface Mount Ap

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SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1312 Advance Information 128 x 64 Dot Matrix OLED/PLED Segment/Common Driver with Controller This do

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Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  RDS(ON) =1.4Ω@VGS = 10V. Pb  Ultra Low gate charge (typica

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Production specification N-Channel Enhancement Mode Field Effect Transistor BL2300 FEATURES z VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A Pb z VDS=20V,

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Production specification 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER FEATURES z Current transfer ratio （CTR：MIN.50%at IF=5mA,VCE=5V） z High isolation volt

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CHINA YOUNG SUN LED TECHNOLOGY CO., LTD. TEL: (86) 755-28079401 28079402 28079403 28079404 28079405 FAX: (86) 755-28079407 E-mail: info@100LED.co

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