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BSR33 Datasheet Preview

BSR33 Datasheet

PNP Medium power transistors

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PNP Medium power transistors
FEATURES
z High current.(max.1A).
z Low voltage(max.80V).
Pb
Lead-free
APPLICATIONS
z Thlephony and general industrial applications.
z Thick and thin-film circuits.
Production specification
BSR30/BSR31/BSR33
ORDERING INFORMATION
Type No.
Marking
BSR30
BSR31
BSR33
BR1
BR2
BR4
SOT-89
Package Code
SOT-89
SOT-89
SOT-89
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
BSR30 BSR31 -70
BSR33 -90
BSR30 BSR31 -60
BSR33 -80
VEBO
Emitter-Base Voltage
-5
IC Collector Current -Continuous
-1
ICM Collector Current -Peak
-2
IBM Peak Base Current
-0.2
PD Total Device Dissipation
1.35
Tj,Tstg
Junction and Storage Temperature
-65 to +150
Unit
V
V
V
A
A
A
W
E071
Rev.A
www.gmicroelec.com
1




GME

BSR33 Datasheet Preview

BSR33 Datasheet

PNP Medium power transistors

No Preview Available !

Production specification
PNP Medium power transistors
BSR30/BSR31/BSR33
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector cut-off current ICBO
VCB=-60V IE=0
-100 nA
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
IEBO
hFE
VCE(sat)
VEB=-5V,IC=0
-100 nA
VCE=-5V IC=-100uA
BSR30 10
BSR31 BSR33 30
VCE=-5V IC=-100mA
BSR30 40
BSR31 BSR33 100
VCE=-5V IC=-500mA
BSR30 30
BSR31 BSR33 50
120
300
IC=-150mA ,IB=-15mA
IC=-500mA, IB=-50mA
-0.25
-0.5
V
Base-emitter
saturation voltage
Transition frequency
VBE(sat)
fT
IC=-150mA , IB=-15mA
IC=-500mA , IB=-50mA
VCE=-10V, IC=-50mA,
f=100MHz
-1
V
-1.2
100 MHz
E071
Rev.A
www.gmicroelec.com
2


Part Number BSR33
Description PNP Medium power transistors
Maker GME
Total Page 3 Pages
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