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BSS84W - P-Channel Power Mosfet

Features

  • Low On-Resistance。.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Available in Lead Free Version. Pb Lead-free.

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Production specification P-Channel Enhancement Mode Field Effect Transistor BSS84W FEATURES  Low On-Resistance。  Low Gate Threshold Voltage.  Low Input Capacitance.  Fast Switching Speed.  Available in Lead Free Version. Pb Lead-free APPLICATIONS  P-channel enhancement mode effect transistor. ORDERING INFORMATION Type No. Marking BSS84W K84 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source voltage -50 V VDGR Drain-Gate voltage -50 V VGSS Gate -Source voltage continuous ±20 V ID Drain current (Note1) continuous -130 mA PD Power Dissipation (Note1) 200 mW RθJA Thermal resistance,Junction-to-Ambient 625 ℃/W TJ, Tstg Junction and Storage Temperature -55 to +150 ℃ Note: 1.
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