Datasheet4U Logo Datasheet4U.com

MA729 - Schottky Barrier Diode

Key Features

  • For super-high speed switching circuit.
  • For small current rectification Pb Lead-free.
  • Allowing to rectify under (IF(AV)=200mA) condition.
  • Allowing high-density mounting Production specification MA729.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MA729 Schottky Barrier Diode LGE
MA729 Schottky Barrier Diodes Panasonic
MA720 Silicon epitaxial planar type Panasonic Semiconductor
MA721 Silicon epitaxial planar type Panasonic
MA723 Schottky Barrier Diodes Panasonic

Other Datasheets by Galaxy Microelectronics

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Schottky Barrier Diode FEATURES  For super-high speed switching circuit  For small current rectification Pb Lead-free  Allowing to rectify under (IF(AV)=200mA) condition  Allowing high-density mounting Production specification MA729 APPLICATIONS  Schottky epitaxial planar ORDERING INFORMATION Type No. Marking MA729 2B SOD-323 Package Code SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits DC reverse voltage VR 30 Repetitive peak reverse voltage VRRM 30 Peak forward Current IFM 300 Average forward Current IF(AV) 200 Non-repetitive peak forward Surge Current IFSM 1000 Power Dissipation Pd 200 Junction temperature Tj 150 Storage temperature range Tstg -55 to +150 Unit V V mA mA mA mW ℃ ℃ B033 Rev.A www.gmesemi.