Full PDF Text Transcription for MJD122 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MJD122. For precise diagrams, and layout, please refer to the original PDF.
Epitaxial Planar NPN Transistor FEATURES High DC Current Gain. Built-in a Damper Diode at E-C. Pb Lead-free Lead Formed for Surface Mount Applications. Straight L...
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b Lead-free Lead Formed for Surface Mount Applications. Straight Lead. Complement to MJD127. Production specification MJD122 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO VEBO IC ICP IB PC Tj ,Tstg Collector-Base Volage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Base Current Collector Power Dissipation Junction and Storage temperature range 100 100 5 8 16 120 1.5 -65 to +150 V V V A A mA W ℃ V/(W)029 Rev.A www.gmesemi.
MJD122 Datasheet
