Full PDF Text Transcription for MJD31C (Reference)
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MJD31C. For precise diagrams, and layout, please refer to the original PDF.
Epitaxial Planar NPN Transistor FEATURES Low formed for surface mount application. Pb Lead-free Electrically similar to popular and TIP31C. Straight Lead. APPLICATI...
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Electrically similar to popular and TIP31C. Straight Lead. APPLICATIONS General purpose amplifier. Low speed switching applications. Production specification MJD31C TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5V IC Collector Current -Continuous 3A ICP Collector Current -Peak 5A IB Base Current 1A PC Collector Power Dissipation 1.25 W Tj ,Tstg Junction and Storage temperature range -65 to +150 ℃ V/(W)033 Rev.A www.gmesemi.
MJD31C Datasheet
