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GME

MJD41C Datasheet Preview

MJD41C Datasheet

Epitaxial Planar NPN Transistor

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Epitaxial Planar NPN Transistor
FEATURES
Low formed for surface mount
application.
Pb
Lead-free
Electrically similar to popular and TIP41C.
Straight Lead.
APPLICATIONS
General purpose amplifier.
Low speed switching applications.
Production specification
MJD41C
TO-251
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
100 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current -Continuous
6A
ICP Collector Current -Peak
10 A
IB Base Current
2A
PC Collector Power Dissipation
1.25 W
Tj ,Tstg
Junction and Storage temperature range
-65 to +150
V/(W)035
Rev.A
www.gmesemi.com
1




GME

MJD41C Datasheet Preview

MJD41C Datasheet

Epitaxial Planar NPN Transistor

No Preview Available !

Production specification
Epitaxial Planar NPN Transistor
MJD41C
ELECTRICAL CHARACTERISTICS@ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX
UNIT
Collector-emitter sustaining voltage
VCEO(sus) IC=30mA,IB=0
100 V
Collector cut-off current
ICEO
VCE=60V,IB=0
50 uA
Collector cut-off current
ICES VCE=100V,VBE=0
10 uA
Emitter cut-off current
IEBO VEB=5V,IC=0
0.5 mA
DC current gain
hFE
VCE=4V,IC=0.3A
VCE=4V,IC=3A
30
15 75
Collector-emitter saturation voltage
VCE(sat)
IC=6A,IB=600mA
1.5 V
Base-emitter on voltage
VBE(on)
VCE=6V,IC=4A
2V
Transition frequency
fT VCE=10V,IC=0.5A
3
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
MHz
V/(W)035
Rev.A
www.gmesemi.com
2


Part Number MJD41C
Description Epitaxial Planar NPN Transistor
Maker GME
Total Page 5 Pages
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