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MJD42C - Epitaxial Planar PNP Transistor

Key Features

  • z Low formed for surface mount Pb.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Epitaxial Planar PNP Transistor FEATURES z Low formed for surface mount Pb application. Lead-free z Electrically similar to popular and TIP42C. z Straight Lead. APPLICATIONS z General purpose amplifier. z Low speed switching applications. Production specification MJD42C TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous ICP Collector Current -Peak IB Base Current -6 A -10 A -2 A PC Collector Power Dissipation 1.5 W RθJC Thermal Resistance,Junciton to Case 6.25 ℃/W RθJA Thermal Resistance,Junciton to Ambient 71.