MJD41C - Epitaxial Planar NPN Transistor

Galaxy Microelectronics

Key Features

Low formed for surface mount.

MJD41C epitaxial planar npn transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	MJD41C
Manufacturer	Galaxy Microelectronics
File Size	213.34 KB
Description	Epitaxial Planar NPN Transistor
Datasheet	MJD41C Datasheet

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MJD42C	Epitaxial Planar PNP Transistor
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Full PDF Text Transcription (Reference)

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Epitaxial Planar NPN Transistor FEATURES  Low formed for surface mount application. Pb Lead-free  Electrically similar to popular and TIP41C.  Straight Lead. APPLICATIONS  General purpose amplifier.  Low speed switching applications. Production specification MJD41C TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5V IC Collector Current -Continuous 6A ICP Collector Current -Peak 10 A IB Base Current 2A PC Collector Power Dissipation 1.25 W Tj ,Tstg Junction and Storage temperature range -65 to +150 ℃ V/(W)035 Rev.A www.gmesemi.