Datasheet Details
| Part number | MJD42C1G |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 206.19 KB |
| Description | PNP Transistor |
| Datasheet |
 MJD42C1G Datasheet
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| Part number | MJD42C1G |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 206.19 KB |
| Description | PNP Transistor |
| Datasheet |
MJD42C1G Datasheet
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Excellent Safe Operating Area Collector-Emitter Saturation Voltage- : VCE(sat)= -1.5 V(Max)@ IC = -6A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-base Voltage -5 V IC Collector Curr
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