MJD42C1G Overview
Description
Excellent Safe Operating Area - Collector-Emitter Saturation Voltage- : VCE(sat)= -1.5 V(Max)@ IC = -6A - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | MJD42C1G |
|---|---|
| Description | PNP Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 206.19 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| MJD42C-Q | Nexperia | 100V 6A PNP high power bipolar transistor |
| MJD42C | Nexperia | 100V 6A PNP high power bipolar transistor |
| MJD42C | onsemi | Complementary PNP Power Transistors |
| MJD42C | Micro Commercial Components | Silicon PNP Transistor |
| MJD42C | Kexin Semiconductor | Complementary Power Transistors |