MJD42C1G Description
·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE= 4V -2 V ICEO Collector Cutoff Current VCE=- 60V; IB=0 -50 µA ICBO Collector Cutoff Current VCB= -100V;.
MJD42C1G is PNP Transistor manufactured by Inchange Semiconductor.
| Part Number | Description |
|---|---|
| MJD13003 | NPN Transistor |
| MJD200 | NPN Transistor |
·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE= 4V -2 V ICEO Collector Cutoff Current VCE=- 60V; IB=0 -50 µA ICBO Collector Cutoff Current VCB= -100V;.