Excellent Safe Operating Area
Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.5 V(Max)@ IC = -6A
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
Designed for use in general purpose amplifer and low speed
switching applications
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon PNP Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.5 V(Max)@ IC = -6A ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for use in general purpose amplifer and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-base Voltage
-5
V
IC
Collector Current-Continuous
-6
A
IB
Base Current
-2
A
Collector Power Dissipation@TC=25℃
20
PC
W
Collector Power Dissipation@Ta=25℃ 1.
MJD42C1G Datasheet
