Datasheet Details
| Part number | MJD42C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 241.03 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | MJD42C-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistors.
| Part number | MJD42C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 241.03 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | MJD42C-InchangeSemiconductor.pdf |
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·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Complement to Type MJD41C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak -10 A IB Base Current Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Junction Temperature -2 A 20 W 1.75 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 6.25 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W MJD42C isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A;
IB= -0.6A VBE(on) Base-Emitter On Voltage IC= -6A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJD42C | PNP Transistor | SeCoS |
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MJD42C | Complementary Power Transistors | Kexin |
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MJD42C | PNP Silicon Epitaxial Planar Transistor | GME |
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MJD42C | Silicon PNP Transistor | MCC |
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