DC Current Gain -hFE = 30(Min)@ IC= -0.3A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min)
Complement to Type MJD41C
DPAK for Surface Mount Applications
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
Design
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isc Silicon PNP Power Transistors
DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min) ·Complement to Type MJD41C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for use in general purpose amplifer and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-6
A
ICM
Collector Current-Peak
-10
A
IB
Base Current
Collector Power Dissipation
TC=25℃
PC
Collector Power Dissipation
Ta=25℃
Tj
Junction Temperature
-2
A
20 W
1.
MJD42C Datasheet
