MJD42C-Q
MJD42C-Q is 100V 6A PNP high power bipolar transistor manufactured by Nexperia.
description
PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN plement: MJD41C-Q
2. Features and benefits
- High thermal power dissipation capability
- High energy efficiency due to less heat generation
- Electrically similar to popular MJD42 series
- Low collector emitter saturation voltage
- Fast switching speeds
- Qualified according to AEC-Q101 and remended for use in automotive applications
3. Applications
- Power management
- Load switch
- Linear mode voltage regulator
- Constant current drive backlighting application
- Motor drive
- Relay replacement
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO collector-emitter voltage
IC collector current
ICM peak collector current h FE
DC current gain
Conditions open base single pulse; tp ≤ 1 ms VCE = -4 V; IC = -0.3 A; pulsed; tp ≤ 200 µs; δ ≤ 0.02; Tamb = 25 °C VCE = -4 V; IC = -3 A; pulsed; tp ≤ 200 µs; δ ≤ 0.02; Tamb = 25 °C
Min Typ Max Unit
- -
-100 V
- -
- -
- -6
-10 A
- 15
- -
Nexperia
100 V, 6 A PNP high power bipolar transistor
5. Pinning information
Table 2. Pinning...
