Datasheet Details
| Part number | MJD41C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 240.79 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJD41C-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistors.
| Part number | MJD41C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 240.79 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJD41C-InchangeSemiconductor.pdf |
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·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·plement to Type MJD42C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Junction Temperature 2 A 20 W 1.75 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 6.25 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W MJD41C isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MJD41C | Complementary Power Transistors | Kexin |
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MJD41C | General Purpose Amplifier | Fairchild |
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MJD41C | SILICON POWER TRANSISTORS | Motorola |
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MJD41C | Epitaxial Planar NPN Transistor | GME |
 |
MJD41C | 100V NPN MEDIUM POWER TRANSISTOR | DIODES |
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