MMBD352W - Schottky Barrier Diode

Galaxy Microelectronics

Key Features

Very low capacitance-less than 1.0Pf @zero volts. Pb Lead-free.
Low forward voltage-0.5 Voltage(Typ. ) @IF=10mA. MMBD352W.

MMBD352W schottky barrier diode by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	MMBD352W
Manufacturer	Galaxy Microelectronics
File Size	150.95 KB
Description	Schottky Barrier Diode
Datasheet	MMBD352W Datasheet

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Production specification Schottky Barrier Diode FEATURES  Very low capacitance-less than 1.0Pf @zero volts. Pb Lead-free  Low forward voltage-0.5 Voltage(Typ.) @IF=10mA. MMBD352W APPLICATIONS  For UHF mixer applications. ORDERING INFORMATION Type No. Marking MMBD352W M5 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Continuous reverse voltage Power Dissipation Thermal resistance junction-to-ambient Junction temperature Storage temperature range VR Pd RθJA Tj Tstg 7.0 200 625 150 -55 to +150 Unit V mW ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Reverse current Forward voltage Symbol IR VF Test conditions VR=3V VR=7V IF=10mA MIN Typ. MAX UNIT 0.25 μA 10 0.