G50N03A mosfet equivalent, mosfet.
�
VDSS RDS(ON) RDS(ON) ID
@ 4.5V(Typ) @10V (Typ)
30V
10 mΩ
6.2 mΩ 50A
� High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and curr.
.
GENERAL FEATURES
�
VDSS RDS(ON) RDS(ON) ID
@ 4.5V(Typ) @10V (Typ)
30V
10 mΩ
6.2 mΩ 50A
� High density cell desig.
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