G80N04 mosfet equivalent, n-channel enhancement mode power mosfet.
VDSS RDS(ON) @10V (typ)
40V
3.2 mΩ
RDS(ON) ID @4.5V (typ)
5.5 mΩ 90A
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage a.
General Features
VDSS RDS(ON) @10V (typ)
40V
3.2 mΩ
RDS(ON) ID @4.5V (typ)
5.5 mΩ 90A
* High density cell desi.
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