XM2N200 mosfet equivalent, n-channel power mosfet.
*
VDSS RDS(ON)
ID
@ 10V (typ)
190V 356.6mΩ 2A
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* E.
General Features
*
VDSS RDS(ON)
ID
@ 10V (typ)
190V 356.6mΩ 2A
* High density cell design for ultra low .
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