GSGTL1R510 mosfet equivalent, 100v n-channel mosfet.
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
* Fast switching an.
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
Symbol
Max.
Drain-Source Voltage
VDS
100.
The GSGTL1R510 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supplies and a wide variety of other appli.
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