MMDT3906 Description
Features Ideal for low power amplification and switching Plastic-Encapsulate transistor Epitaxial planar die construction MMDT3906 Dual PNP Transistor Ratings (TA=25°C unless otherwise noted） Parameter Collector-Base Voltage Collector-Emitter Voltage.
MMDT3906 Key Features
- Ideal for low power amplification and switching
- Plastic-Encapsulate transistor
- Epitaxial planar die construction