SSF18N50F - 500V N-Channel MOSFET

GOOD-ARK

Download the SSF18N50F datasheet PDF. This datasheet also covers the SSF18N50F-GOOD variant, as both devices belong to the same 500v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

Key Features

TO- 220F.
Advanced Process Technology.
Special designed for PWM, load switching and general purpose.

📥 Download Datasheet

SSF18N50F 500v n-channel mosfet by GOOD-ARK - Datasheet Preview — Note: The manufacturer provides a single datasheet file (SSF18N50F-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	SSF18N50F
Manufacturer	GOOD-ARK
File Size	1.11 MB
Description	500V N-Channel MOSFET
Datasheet	SSF18N50F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Main Product Characteristics VDSS 500V RDS(on) 0.22ohm(typ.) ID 18A Features and Benefits TO- 220F  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF18N50F 500V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.