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GS74116TP - 256K x 16 4Mb Asynchronous SRAM

General Description

The GS74116 is a high speed CMOS static RAM organized as 262,144-words by 16-bits.

Static design eliminates the need for external clocks or timing strobes.

Operating on a single 3.3V power supply and all inputs and outputs are TTL compatible.

Key Features

  • Fast access time: 8, 10, 12, 15ns.
  • CMOS low power operation: 170/145/130/110 mA at min. cycle time.
  • Single 3.3V ± 0.3V power supply.
  • All inputs and outputs are TTL compatible.
  • Byte control.
  • Fully static operation.
  • Industrial Temperature Option: -40° to 85°C.
  • Package line up J: 400mil, 44 pin SOJ package TP: 400mil, 44 pin TSOP Type II package U: 7.20mm x 11.65mm Fine Pitch Ball Grid Array package 256K x 16 4Mb Asynchronous.

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Datasheet Details

Part number GS74116TP
Manufacturer GSI Technology
File Size 153.81 KB
Description 256K x 16 4Mb Asynchronous SRAM
Datasheet download datasheet GS74116TP Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com GS74116TP/J/U SOJ, TSOP, FP-BGA Commercial Temp Industrial Temp Features • Fast access time: 8, 10, 12, 15ns • CMOS low power operation: 170/145/130/110 mA at min.cycle time. • Single 3.3V ± 0.3V power supply • All inputs and outputs are TTL compatible • Byte control • Fully static operation • Industrial Temperature Option: -40° to 85°C • Package line up J: 400mil, 44 pin SOJ package TP: 400mil, 44 pin TSOP Type II package U: 7.20mm x 11.65mm Fine Pitch Ball Grid Array package 256K x 16 4Mb Asynchronous SRAM SOJ 256K x 16 Pin Configuration A4 A3 A2 A1 A0 CE DQ1 DQ2 DQ3 DQ4 VDD VSS DQ5 DQ6 DQ7 DQ8 WE A15 A14 A13 A12 A16 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 8, 10, 12, 15ns 3.