Part GS8161E32DD
Description 18Mb SyncBurst SRAMs
Manufacturer GSI Technology
Size 1.19 MB
GSI Technology
GS8161E32DD

Overview

  • FT pin for user-configurable flow through or pipeline operation
  • Dual Cycle Deselect (DCD) operation
  • IEEE 1149.1 JTAG-compatible Boundary Scan
  • 2.5 V or 3.3 V +10%/-10% core power supply
  • 2.5 V or 3.3 V I/O supply
  • LBO pin for Linear or Interleaved Burst mode
  • Internal input resistors on mode pins allow floating mode pins
  • Default to Interleaved Pipeline mode
  • Byte Write (BW) and/or Global Write (GW) operation
  • Internal self-timed write cycle